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ES3A - ES3J
3.0 AMPS. Surface Mount Super Fast Rectifiers SMC/DO-214AB
.126(3.20) .114(2.90)
.245(6.22) .220(5.59)
Features
Glass passivated junction chip For surface mounted applications Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260oC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0
.280(7.11) .260(6.60)
.012(.31) .006(.15)
.103(2.62) .079(2.00)
.061(1.56) .050(1.26)
.008(.20) .004(.10)
.063(1.6) .039(1.0)
Mechanical Data
Cases: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.21 gram
.320(8.13) .305(7.75)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES ES Type Number
3A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) @TL = 100 oC Maximum Instantaneous Forward Voltage @ 3.0A Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Notes: 3B 3C 3D
ES 3F
ES 3G
ES 3H
ES 3J
Units
V V V A A
VRRM VRMS VDC I(AV) IFSM VF IR Trr Cj RJA RJL
TJ
50 35 50
100 150 200 300 400 500 600 70 105 140 210 280 350 420 100 150 200 300 400 500 600 3.0 100 0.95 10 500 35 45 47 12 -55 to +150 -55 to +150 30
o
1.3
1.7
V uA uA nS pF
C /W
o o
TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Units Mounted on P.C.B. with 0.6" x 0.6"(16mm x 16mm) Copper Pad Areas
C C
- 184 -
Version: B07
RATINGS AND CHARACTERISTIC CURVES (ES3A THRU ES3J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
3 RESISTIVE OR INDUCTIVE LOAD 2 150 PEAK FORWARD SURGE CURRENT. (A) 125 100 75 50 25 0 80 90 100 110 120 130 o LEAD TEMPERATURE. ( C) 140 150 1 10 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C
AVERAGE FORWARD CURRENT. (A)
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
1 P.C.B. MOUNTED ON 0.6X0.6"(16X16mm) COPPER PADS 0
100
FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
INSTANTANEOUS FORWARD CURRENT. (A)
10
Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE
0
100 Tj=100 0C
ES 3A
-D
-G
E
S
3F
10 Tj=75 0C
1
E S 3H -J
1
Tj=25 0C
0.1
0.1
0.01 0.4
0.6
0.8 1.0 1.2 1.4 FORWARD VOLT AGE. (V)
1.6
1.8
0.01 0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLT AGE. (%) 100 TRANSIENT THERMAL IMPEDANCE ( OC/W)
105 JUNCTION CAPACITANCE.(pF) 90 75 60 45 30
FIG.5- TYPICAL JUNCTION CAPACIT ANCE
Tj=25 0C f=1.0MHz Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
10
ES3
ES3
F-J
1
A-
D
15 0 1 10 REVERSE VOLTAGE. (V) 100
0.1 0.01
0.1
1 T, HEATING TIME (sec.)
10
100
FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
Version: B07

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